Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching
نویسندگان
چکیده
Roozbeh Shokri,1 Holger L. Meyerheim,1,* Sumalay Roy,1 Katayoon Mohseni,1 A. Ernst,1 M. M. Otrokov,2,3 E. V. Chulkov,2,3,4 and J. Kirschner1,5 1Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany 2Tomsk State University, 634050 Tomsk, Russia 3Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain 4Departamento de Fı́sica de Materiales UPV/EHU, Centro de Fı́sica de Materiales CFM MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain 5Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle, Germany (Received 9 January 2015; revised manuscript received 23 April 2015; published 21 May 2015)
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